General synthesis of two-dimensional van der Waals heterostructure arrays.

["Li, Jia", "Yang, Xiangdong", "Liu, Yang", "Huang, Bolong", "Wu, Ruixia", "Zhang, Zhengwei", "Zhao, Bei", "Ma, Huifang", "Dang, Weiqi", "Wei, Zheng", "Wang, Kai", "Lin, Zhaoyang", "Yan, Xingxu", "Sun, Mingzi", "Li, Bo", "Pan, Xiaoqing", "Luo, Jun", "Zhang, Guangyu", "Liu, Yuan", "Huang, Yu", "Duan, Xidong", "Duan, Xiangfeng"]
Nature 2020
Open on PubMed

Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest1-4. However, most vdWHs reported so far  are created by an arduous micromechanical exfoliation and manual restacking process5, which-although versatile for proof-of-concept demonstrations6-16 and fundamental studies17-30-is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moiré superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices.